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MSA0104 Dataheets PDF



Part Number MSA0104
Manufacturers Hewlett-Packard
Logo Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
Datasheet MSA0104 DatasheetMSA0104 Datasheet (PDF)

Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data www.DataSheet4U.com MSA-0104 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 0.8 GHz • High Gain: 17.0 dB Typical at 0.5 GHz • Unconditionally Stable (k>1) • Low Cost Plastic Package designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and wide bandwidth IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, si.

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Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data www.DataSheet4U.com MSA-0104 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 0.8 GHz • High Gain: 17.0 dB Typical at 0.5 GHz • Unconditionally Stable (k>1) • Low Cost Plastic Package designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and wide bandwidth IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 04A Plastic Package Description The MSA-0104 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5 V 2 5965-9690E 6-246 MSA-0104 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature www.DataSheet4U.com Absolute Maximum[1] 40 mA 200 mW +13 dBm 150°C –65 to 150°C Thermal Resistance[2,4]: θjc = 100°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 10 mW/°C for TC > 130°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. MSA-0104 Electrical Specifications[1], TA = 25°C Symbol GP ∆G P f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 17 mA, ZO = 50 Ω Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 3.0 GHz f = 0.1 to 3.0 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.5 GHz f = 0.1 GHz f = 0.5 GHz f = 0.1 to 0.6 GHz Units dB dB GHz Min. 17.0 Typ. 18.5 17.0 ± 1.0 0.8 1.4:1 1.3:1 Max. dB dBm dBm psec V mV/ °C 4.5 5.5 1.5 14.0 180 5.0 –9.0 5.5 Notes: 1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current is on the following page. MSA-0104 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 17 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.2 0.3 0.4 0.5 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 .06 .08 .10 .12 .13 .14 .16 .17 .17 .13 .08 .02 .05 .12 .19 .27 141 112 94 77 70 56 41 28 5 –12 –20 –37 128 113 97 80 18.4 18.1 17.8 17.4 16.9 16.4 15.4 14.3 12.1 10.2 8.9 7.7 6.7 5.7 4.8 3.9 8.31 8.07 7.75 7.38 7.01 6.60 5.87 5.21 4.02 3.25 2.77 2.42 2.15 1.92 1.73 1.56 170 160 151 142 134 127 114 102 78 59 46 31 15 –1 –15 –30 –22.3 –22.3 –22.0 –21.6 –21.0 –20.7 –19.5 –18.9 –16.6 –14.9 –13.6 –12.7 –11.9 –11.3 –10.8 –10.6 .077 .077 .079 .083 .089 .092 .106 .114 .148 .179 .209 .232 .253 .272 .289 .294 5 9 15 16 19 21 27 29 30 25 25 18 10 2 –7 –15 .07 .07 .07 .07 .07 .08 .08 .08 .08 .07 .05 .05 .06 .06 .07 .07 –9 –15 –22 –32 –37 –44 –53 –61 –73 –90 –112 –134 –160 –175 173 150 A model for this device is available in the DEVICE MODELS section. 6-247 MSA-0104 Typical Performance, TA = 25°C (unless otherwise noted) 21 18 Gain Flat to DC 15 Gp (dB) 25 TC = +85°C TC = +25°C TC = –25°C G p (dB) 25 0.1 GHz 20 0.5 GHz 1.0 GHz 20 12 9 Id (mA) 15 15 10 10 2.0 GHz 6 www.DataSheet4U.com 3 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) 5 5 0 0 1 2 3 Vd (V) 4 5 6 0 10 15 20 I d (mA) 25 30 Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 17 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. G p (dB) 18 17 16 7 6 5 4 NF GP 7 NF (dB) 6 I d = 20 mA 4 7.0 6.5 P1 dB (dBm) I d = 13 mA I d = 17 mA I d = 20 mA I d = 17 mA NF (dB) 6 5 4 2 6.0 0 P1 dB (dBm) 3 2 1 0 –55 –25 +25 +85 +125 –4 0.1 P1 dB –2 I d = 13 mA 5.5 5.0 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz) FREQUENCY (GHz) TEMPERATURE (°C) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. CaseTemperature, f = 0.5 GHz, Id = 17 mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-248 04A Plastic Package Dimensions 12.39 ± 0.76 (0.488 ± 0.030) 4 GROUND 0.76 (0.030) DIA. RF INPUT 0.76 (0.030) 1 1 4.29 (0.169) 3 0.96 (0.038) RF OUTPUT & BIAS www.DataSheet4U.com 2 GROUND 0.51 (0.020) NOTES: (UNLESS OTHERWISE SPECIFIED) 1. DIMENSIONS ARE IN MILLIMETERS (INCHES) 2. TOLERANCES mm .XX = ± 0.13 in .XXX = ± 0.005 0.20 ± 0.050 (0.008 ± 0.002) 2.54 ± 0.25 (0.100 ± 0.010) 3.68 (0.145) DIMENSIONS ARE IN MILLIMETERS (INCHES). 6-249 .


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