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PTMB75B12 Dataheets PDF



Part Number PTMB75B12
Manufacturers Nihon Inter Electronics
Logo Nihon Inter Electronics
Description IGBT MODULE
Datasheet PTMB75B12 DatasheetPTMB75B12 Datasheet (PDF)

IGBT MODULE CIRCUIT SixSix-Pack 75A 1200V OUTLINE DRAWING PTMB75B12 12- fasten- tab No 110 www.DataSheet4U.com Dimension(mm) Approximate Weight : 550g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PTMB75B12 1200 +/ - 20 75 150 400 -40 to +150 -40 to +125 2500 2 1.4 Unit V V A W °C °C V N•m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Volt.

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IGBT MODULE CIRCUIT SixSix-Pack 75A 1200V OUTLINE DRAWING PTMB75B12 12- fasten- tab No 110 www.DataSheet4U.com Dimension(mm) Approximate Weight : 550g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PTMB75B12 1200 +/ - 20 75 150 400 -40 to +150 -40 to +125 2500 2 1.4 Unit V V A W °C °C V N•m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=75A,VGE=15V VCE=5V,IC=75mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 8 ohm RG= 13 ohm VGE= +/- 15V Min. 4.0 - Typ. 1.9 6300 0.25 0.40 0.25 0.80 Max. 2.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 Unit mA µA V V pF µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 75 150 Unit A Typ. 1.9 0.2 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=75A,VGE=0V IF=75A,VGE=-10V,di/dt=150A/µs Min. - Max. 2.4 0.3 Unit V µs Unit °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.3 0.6 PTMB75B12 Fig.1- Output Characteristics (Typical) 150 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) TC=25℃ 16 TC=25℃ IC=30A 150A VGE=20V 15V 125 12V 10V Collector to Emitter Voltage V CE (V) 14 12 10 8 6 4 2 0 75A Collector Current I C (A) 100 9V 75 50 8V 25 www.DataSheet4U.com 0 7V 2 4 6 8 10 0 0 4 8 12 16 20 Collector to Emitter Voltage V CE (V) Gate to Emitter Voltage V GE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 800 700 600 500 400 16 TC=125℃ IC=30A 150A Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 14 RL=8Ω TC=25℃ 14 Gate to Emitter Voltage V GE (V) 75A 12 10 8 6 4 2 0 12 10 8 VCE =600V 300 6 400V 200 100 0 0 100 200 300 400 500 600 200V 4 2 0 0 4 8 12 16 20 Gate to Emitter Voltage V GE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 50000 20000 10000 Fig.6- Collector Current vs. Switching Time (Typical) 1.6 1.4 1.2 VGE=0V f=1MHZ TC=25℃ Cies VCC=600V R G=13Ω VGE=±15V TC=25℃ Switching Time t (μs) Capacitance C (pF) 5000 2000 1000 500 200 100 50 20 tOFF 1 0.8 0.6 0.4 0.2 0 0 25 50 75 Coes tf Cres tON tr 0.1 0.2 0.5 1 2 5 10 20 50 100 200 Collector to Emitt.


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