MID400-12E4

IGBT Module phaseleg and chopper topolgies MII 400-12E4 MID 400-12E4 MDI 400-12E4 3 D1 1 D12 2 8 9 D2 2 T1 3 D11 1 IC25 = 420 A = 1200 V VCES VCE(sat) typ. = 2.2 V Preliminary T1 8 9 T2 www.DataSheet4U.com 11 10 D2 2 11 10 3 D1 1 T2 MII MID MDI Features IGBTs T1-T2 Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 4.7 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 4.7 Ω; TVJ = 125°C non repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 420 300 450 VCES 10 1700 V V A A A µs W IGBT - low saturation voltage - positive temperature coefficient - fast switching - short tail current for optimized performance in resonant circuits HiPerFREDTM diodes - fast and soft reverse recovery - low operating forward voltage - low leakage current Package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - kelvin emitter terminal for easy drive - isolated ceramic base plate Applications Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.2 2.6 4.5 TVJ = 25°C TVJ = 125°C 0.8 3.5 2.8 6.5 3.3 600 150 60 680 50 36 30 17 2.25 0.15 V V V mA mA nA ns ns ns ns mJ mJ nF µC 0.08 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH IC = 300 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 10 mA; VGE = VCE VC...