30V N-Channel Power MOSFET
30V N-Channel Power MOSFET General Description
The AAT9460 is a low threshold MOSFET designed for applications in DC-DC ...
Description
30V N-Channel Power MOSFET General Description
The AAT9460 is a low threshold MOSFET designed for applications in DC-DC Converter, battery, cell phone, and PDA markets. Using AnalogicTech™'s ultra-high density proprietary TrenchDMOS™ technology, this product demonstrates high power handling and small size.
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AAT9460
Features
VDS(MAX) = 30V ID(MAX) 1 = 3.4A @ 25°C Low RDS(ON): 58 mΩ @ VGS = 4.5V 84 mΩ @ VGS = 2.5V
Applications
DC-DC Converters Battery Packs Cellular & Cordless Telephones Battery-powered portable equipment
SC59 Package
Top View
D 3
Preliminary Information
1 G
2 S
Absolute Maximum Ratings
Symbol
VDS VGS ID IDM IS PD TJ, TSTG
(TA=25°C unless otherwise noted) Value
30 ±12 ±3.4 ±2.7 ±8.0 1.0 1.1 0.7 -55 to 150
Description
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150°C
1
Units
V
TA = 25°C TA = 70°C
1
Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) Maximum Power Dissipation
1
A
TA = 25°C TA = 70°C
W °C
Operating Junction and Storage Temperature Range
Thermal Characteristics
Symbol
RθJA RθJA2 RθJF
Description
Typical Junction-to-Ambient steady state Maximum Junction-to-Ambient t<5 seconds Typical Junction-to-Foot 1
1 1
Value
140 115 45
Units
°C/W
9460.2003.10.0.63
1
30V N-Channel Power MOSFET Electrical Characteristics
Symbol Description (TJ=25°C unless otherwise noted) Conditions Min
30 46 65 8 0.6 ±100 1 5 9 5 0.9 1 6 3 30 8 1.3 1.0 58 84
AAT9460
Typ
Ma...
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