SSM4K27CT

SSM4K27CT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) SSM4K27CT ○ Switching Applications Small package Low on-resistance: RDS(ON) = 205 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 260 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 390 mΩ (max) (@VGS = 1.8 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Drain-Source voltage VDSS 20 V Gate-Source voltage VGSS ±12 V Drain current DC ID Pulse IDP 0.5 A 1.0 Power dissipation PD (Note 1) 400 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC ⎯ temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEITA TOSHIBA ⎯ 2-1M1A operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 1.1 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Marking (top view) 4 3 Electrode Layout (bottom view) Equivalent Circuit (top view) 4 3 3 4 SA 1 2 2 1 1 2 Polarity marking Handling Precaution 1 Ga...