Document
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
September 2007
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
Features
■ High voltage:
tm
General Description
The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
– MOC8204M, BVCER = 400V – H11D1M, H11D2M, BVCER = 300V – H11D3M, BVCER = 200V www.DataSheet4U.com ■ High isolation voltage: – 7500 VAC peak, 1 second ■ Underwriters Laboratory (UL) recognized File # E90700, Volume 2
Applications
■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs ■ Appliance sensor systems ■ Industrial controls
Schematic
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE TSTG TOPR TSOL PD
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Parameter
Storage Temperature Operating Temperature Lead Solder Temperature (Wave Solder) Total Device Power Dissipation @ TA = 25°C Derate Above 25°C
Device
All All All All
Value
-55 to +150 -40 to +100 260 for 10 sec 260 3.5
Units
°C °C °C mW mW/°C mA V A mW mW/°C
EMITTER IF VR IF(pk) PD Forward DC Current(1) Reverse Input Voltage(1) Forward Current – Peak (1µs pulse, 300pps)(1) LED Power Dissipation @ TA = 25°C(1) Derate Above 25°C DETECTOR PD VCER Power Dissipation @ TA = 25°C Derate linearly above 25°C Collector to Emitter Voltage(1) MOC8204M H11D1M, H11D2M H11D3M 4N38M VCBO Collector Base Voltage(1) MOC8204M H11D1M, H11D2M H11D3M 4N38M VECO Emitter to Collector Voltage(1) H11D1M, H11D2M, H11D3M, MOC8204M All All 300 4.0 400 300 200 80 400 300 200 80 7 V V mW mW/°C V All All All All 80 6.0 3.0 150 1.41
IC
Collector Current (Continuous)
100
mA
Note: 1. Parameters meet or exceed JEDEC registered data (for 4N38M only).
©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2
www.fairchildsemi.com 2
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
Electrical Characteristics (TA = 25°C unless otherwise specified.)
Individual Component Characteristics Symbol
EMITTER VF ∆VF ∆TA BVR CJ
www.DataSheet4U.com IR
Characteristic
Forward Voltage(2) Forward Voltage Temp. Coefficient Reverse Breakdown Voltage Junction Capacitance Reverse Leakage Current(2) Breakdown Voltage Collector to Emitter(2)
Test Conditions
IF = 10mA
Device
All All
Min.
Typ.*
1.15 -1.8
Max.
1.5
Unit
V mV/°C V pF pF
IR = 10µA VF = 0V, f = 1MHz VF = 1V, f = 1MHz VR = 6V
All All All
6
25 50 65 0.05 10
µA
DETECTOR BVCER RBE = 1MΩ, IC = 1.0mA, IF = 0 MOC8204M H11D1M/2M H11D3M BVCEO BVCBO Collector to Base(2) No RBE, IC = 1.0mA IC = 100µA, IF = 0 4N38M MOC8204M H11D1M/2M H11D3M 4N38M BVEBO BVECO ICER Emitter to Base Emitter to Collector Leakage Current Collector to Emitter(2) (RBE = 1MΩ) IE = 100µA, IF = 0 IE = 100µA, IF = 0 VCE = 300V, IF = 0, TA = 25°C VCE = 300V, IF = 0, TA = 100°C VCE = 200V, IF = 0, TA = 25°C VCE = 200V, IF = 0, TA = 100°C VCE = 100V, IF = 0, TA = 25°C VCE = 100V, IF = 0, TA = 100°C ICEO No RBE, VCE = 60V, IF = 0, TA = 25°C 4N38M H11D3M H11D1M/2M 4N38M All MOC8204M 400 300 200 80 400 300 200 80 7 7 10 100 250 100 250 100 250 50 V V nA µA nA µA nA µA nA V V
Transfer Characteristics (TA = 25°C Unless otherwise specified.) Symbol
EMITTER CTR Current Transfer Ratio, Collector to Emitter Saturation Voltage(2) IF = 10mA, VCE = 10V, RBE = 1MΩ IF = 10mA, VCE = 10V IF = 10mA, IC = 0.5mA, RBE = 1MΩ IF = 20mA, IC = 4mA SWITCHING TIMES H11D1M/2M/3M, MOC8204M 4N38M H11D1M/2M/3M, MOC8204M 4N38M All All 5 5 2 (20) 2 (20) 0.1 0.40 1.0 V mA (%)
Characteristics
Test Conditions
Device
Min.
Typ.*
Max.
Units
VCE(SAT)
tON tOFF
Non-Saturated Turn-on Time Turn-off Time
VCE = 10V, ICE = 2mA, RL = 100Ω
µs µs
*All Typical values at TA = 25°C Note: 2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2 www.fairchildsemi.com 3
H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers
DC Electrical Characteristics (TA = 25°C unless otherwise specified.) (Continued)
Isolation Characteristics Symbol
VISO RISO CISO
Characteristic
Isolation Voltage Isolation Resistance Isolation Capacitance
Test Conditions
f .