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MOC8204M Dataheets PDF



Part Number MOC8204M
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description High Voltage Phototransistor Optocouplers
Datasheet MOC8204M DatasheetMOC8204M Datasheet (PDF)

H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers September 2007 H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers Features ■ High voltage: tm General Description The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. –.

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H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers September 2007 H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers Features ■ High voltage: tm General Description The H11DXM, 4N38M and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. – MOC8204M, BVCER = 400V – H11D1M, H11D2M, BVCER = 300V – H11D3M, BVCER = 200V www.DataSheet4U.com ■ High isolation voltage: – 7500 VAC peak, 1 second ■ Underwriters Laboratory (UL) recognized File # E90700, Volume 2 Applications ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs ■ Appliance sensor systems ■ Industrial controls Schematic ANODE 1 6 BASE CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER ©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2 www.fairchildsemi.com H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol TOTAL DEVICE TSTG TOPR TSOL PD www.DataSheet4U.com Parameter Storage Temperature Operating Temperature Lead Solder Temperature (Wave Solder) Total Device Power Dissipation @ TA = 25°C Derate Above 25°C Device All All All All Value -55 to +150 -40 to +100 260 for 10 sec 260 3.5 Units °C °C °C mW mW/°C mA V A mW mW/°C EMITTER IF VR IF(pk) PD Forward DC Current(1) Reverse Input Voltage(1) Forward Current – Peak (1µs pulse, 300pps)(1) LED Power Dissipation @ TA = 25°C(1) Derate Above 25°C DETECTOR PD VCER Power Dissipation @ TA = 25°C Derate linearly above 25°C Collector to Emitter Voltage(1) MOC8204M H11D1M, H11D2M H11D3M 4N38M VCBO Collector Base Voltage(1) MOC8204M H11D1M, H11D2M H11D3M 4N38M VECO Emitter to Collector Voltage(1) H11D1M, H11D2M, H11D3M, MOC8204M All All 300 4.0 400 300 200 80 400 300 200 80 7 V V mW mW/°C V All All All All 80 6.0 3.0 150 1.41 IC Collector Current (Continuous) 100 mA Note: 1. Parameters meet or exceed JEDEC registered data (for 4N38M only). ©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2 www.fairchildsemi.com 2 H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers Electrical Characteristics (TA = 25°C unless otherwise specified.) Individual Component Characteristics Symbol EMITTER VF ∆VF ∆TA BVR CJ www.DataSheet4U.com IR Characteristic Forward Voltage(2) Forward Voltage Temp. Coefficient Reverse Breakdown Voltage Junction Capacitance Reverse Leakage Current(2) Breakdown Voltage Collector to Emitter(2) Test Conditions IF = 10mA Device All All Min. Typ.* 1.15 -1.8 Max. 1.5 Unit V mV/°C V pF pF IR = 10µA VF = 0V, f = 1MHz VF = 1V, f = 1MHz VR = 6V All All All 6 25 50 65 0.05 10 µA DETECTOR BVCER RBE = 1MΩ, IC = 1.0mA, IF = 0 MOC8204M H11D1M/2M H11D3M BVCEO BVCBO Collector to Base(2) No RBE, IC = 1.0mA IC = 100µA, IF = 0 4N38M MOC8204M H11D1M/2M H11D3M 4N38M BVEBO BVECO ICER Emitter to Base Emitter to Collector Leakage Current Collector to Emitter(2) (RBE = 1MΩ) IE = 100µA, IF = 0 IE = 100µA, IF = 0 VCE = 300V, IF = 0, TA = 25°C VCE = 300V, IF = 0, TA = 100°C VCE = 200V, IF = 0, TA = 25°C VCE = 200V, IF = 0, TA = 100°C VCE = 100V, IF = 0, TA = 25°C VCE = 100V, IF = 0, TA = 100°C ICEO No RBE, VCE = 60V, IF = 0, TA = 25°C 4N38M H11D3M H11D1M/2M 4N38M All MOC8204M 400 300 200 80 400 300 200 80 7 7 10 100 250 100 250 100 250 50 V V nA µA nA µA nA µA nA V V Transfer Characteristics (TA = 25°C Unless otherwise specified.) Symbol EMITTER CTR Current Transfer Ratio, Collector to Emitter Saturation Voltage(2) IF = 10mA, VCE = 10V, RBE = 1MΩ IF = 10mA, VCE = 10V IF = 10mA, IC = 0.5mA, RBE = 1MΩ IF = 20mA, IC = 4mA SWITCHING TIMES H11D1M/2M/3M, MOC8204M 4N38M H11D1M/2M/3M, MOC8204M 4N38M All All 5 5 2 (20) 2 (20) 0.1 0.40 1.0 V mA (%) Characteristics Test Conditions Device Min. Typ.* Max. Units VCE(SAT) tON tOFF Non-Saturated Turn-on Time Turn-off Time VCE = 10V, ICE = 2mA, RL = 100Ω µs µs *All Typical values at TA = 25°C Note: 2. Parameters meet or exceed JEDEC registered data (for 4N38M only). ©2000 Fairchild Semiconductor Corporation H11DXM, 4N38M, MOC8204M Rev. 1.0.2 www.fairchildsemi.com 3 H11D1M, H11D2M, H11D3M, 4N38M, MOC8204M High Voltage Phototransistor Optocouplers DC Electrical Characteristics (TA = 25°C unless otherwise specified.) (Continued) Isolation Characteristics Symbol VISO RISO CISO Characteristic Isolation Voltage Isolation Resistance Isolation Capacitance Test Conditions f .


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