5STP34Q5200

VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 3875 A 6090 A 55000 A 1.03 V 0.160 mΩ Phase Control Thyristor 5STP 34Q5200 Doc. No. 5SYA1052-01 Sep. 01 Patented free-floating silicon technology Low on-state and switching losses for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate www.DataSheet4U.com Designed Blocking Part Number VDSM VDRM VRSM1 IDSM IRSM dV/dtcrit VRSM VRRM 5STP 5200 V 4400 V 5700 V 5STP 34Q5000 5STP 34Q4600 Conditions 5000 V 4200 V 5500 V ≤ 500 mA ≤ 500 mA 2000 V/µs 4600 V 4000 V 5100 V f = 5 Hz, tp = 10ms f = 50 Hz, tp = 10ms tp = 5ms, single pulse VDSM VRSM Tj = 125°C Exp. to 0.67 x VDRM, Tj = 125°C VDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110°C Mechanical data FM Mounting force nom. min. max. a Acceleration Device unclamped Device clamped m DS Da Weight Surface creepage distance Air strike distance 50 m/s2 100 m/s2 2.1 kg 36 mm 15 mm 90 kN 81 kN 108 kN ABB Semiconductors AG reserves the right to change specifications without notice. 5STP 34Q5200 On-state ITAVM ITRMS ITSM It 2 Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral 3875 A 6090 A 55000 A 60000 A 2 2 Half sine wave, TC = 70°C tp = tp = 10 ms 8.3 ms 10 ms 8.3 ms 3000 A Tj = 125°C Tj = 125°C After surge: VD = VR = 0V 15125 kA s tp = 14940 kA s tp = VT VT0 www.DataSheet4U.com On-state voltage Threshold voltage Slope resistance Holdin...