Document
VDSM ITAVM ITRMS ITSM VT0 rT
= = = = = =
5200 V 3600 A 5650 A 55000 A 1.03 V 0.16 mΩ
Phase Control Thyristor
5STP 34N5200
Doc. No. 5SYA1002-03 Jan. 02
• • • •
Patented free-floating silicon technology Low on-state and switching losses for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate
• Designed www.DataSheet4U.com
Blocking
Maximum rated values
1)
Symbol VDSM, VRSM VDRM, VRRM VRSM1 dV/dtcrit Parameter
Conditions f = 5 Hz, tp = 10ms f = 50 Hz, tp = 10ms tp = 5ms, single pulse Exp. to 0.67 x VDRM, Tj = 125°C
5STP 34N5200 5STP 34N5000 5STP 34N4600 5200 V 4400 V 5700 V 5000 V 4200 V 5500 V 2000 V/µs min typ max 500 500 Unit mA mA 4600 V 4000 V 5100 V
Characteristic values
Symbol Conditions IDSM IRSM VDSM, Tj = 125°C VRSM, Tj = 125°C
Forwarde leakage current Reverse leakage current
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110°C
Mechanical data
Maximum rated values
1)
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions FM a a Device unclamped Device clamped
min 81
typ 90
max 108 50 100
Unit kN m/s m/s Unit kg mm mm
2 2
Parameter Weight Surface creepage distance Air strike distance
Symbol Conditions m DS Da
min 56 22
typ 2.9
max
1)
Maximum Ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 34N5200
On-state
Maximum rated values
1)
Parameter Max. average on-state current RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral
Characteristic values
w w w . D a t Parameter a S h e e t 4 U . c o m
Symbol Conditions ITAVM ITRMS ITSM I2t ITSM I2t tp = 10 ms, Tj = 125°C, VD=VR = 0 V tp = 8.3 ms, Tj = 125°C, VD=VR=0 V Half sine wave, Tc = 70°C
min
typ
max 3600 5650 55000 15125 60000 14940
Unit A A A kA2s A kA2s Unit V V mΩ mA mA mA mA
Symbol Conditions VT VT0 rT IH IL IT = 3000 A, Tj= 125°C IT = 2300 A - 7000 A, Tj= 125°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C
min
typ
max 1.54 1.03 0.16 125 75 500 250
On-state voltage Threshold voltage Slope resistance Holding current Latching current
Switching
Maximum rated values
1)
Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current
Symbol Conditions di/dtcrit di/dtcrit Cont. Tj = 125°C, ITRM = 3000 A, f = 50 Hz VD ≤ 0.67⋅VDRM, Cont. IFG = 2 A, tr = 0.5 µs f = 1Hz Tj = 125°C, ITRM = 3000 A, VR = 200 V, diT/dt = -5 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs,
min
typ
max 250 1000
Unit A/µs A/µs µs
Circuit-commutated turn-off tq time
Characteristic values
700
Parameter Recovery charge Delay time
Symbol Conditions Qrr td Tj = 125°C, ITRM = 3000 A, VR = 200 V, diT/dt = -5 A/µs VD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 µs
min 7000
typ
max 9000 3
Unit µAs µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1002-03 Jan. 02 page 2 of 6
5STP 34N5200
Triggering
Maximum rated values
1)
Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Gate power loss Average gate power loss
Characteristic values
Symbol Conditions VFGM IFGM VRGM PG PGAV Symbol Conditions VGT IGT VGD IGD Tj = 25°C Tj = 25°C VD = 0.4 x VDRM, Tvjmax = 125°C VD = 0.4 x VDRM, Tvjmax = 125°C For DC gate current
min
typ
max 12 10 10 3
Unit V A V W
see Fig. 9 min typ max 2.6 400 0.3 10 Unit V mA V mA
Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger www.DataSheet4U.com current
Thermal
Maximum rated values
1)
Parameter Operating junction temperature range
Characteristic values
Symbol Conditions Tj
min
typ
max 125
Unit °C °C Unit K/kW K/kW K/kW K/kW K/kW
Storage temperature range Tstg Parameter Symbol Conditions Double side cooled Anode side cooled Cathode side cooled Double side cooled Single side cooled
-40 min typ
140 max 5.7 11.4 11.4 1 2
Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h)
Analytical function for transient thermal impedance:
ZthJC(t) = å Ri(1 - e -t/τ i )
i =1
i Ri(K/kW) τi(s) 1 3.4 0.8685 2 1.26 0.1572 3 0.68 0.0219 4 0.35 0.0078 Fig. 1 Transient thermal impedance junction-to case.
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1002-03 Jan. 02 page 3 of 6
5STP 34N5200
On-state characteristic model:
VT = A + B ⋅ iT + C ⋅ ln(iT +1) + D ⋅ IT
Valid for iT = 500 – 14000 A A 1.0649e+ B 1.0500e-4 C -3.8879e-2 D 8.1550e-3
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Fig. 2 On-state characteristics. Tj=125°C, 10ms half sine
Fig. 3 On-state characteristics.
Fig. 4 On-state power dissipation vs. mean onstate current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs. mean on-state current.
ABB Switzerland Ltd, Semi.