5STP34H1601

VDRM IT(AV)M IT(RMS) ITSM V(T0) rT = = = = = = 1600 3370 5292 49×103 0.94 0.066 V A A A V mΩ Phase Control Thyristor 5STP 34H1601 Doc. No. 5SYA1065-01 March 05 Low on-state and switching losses Designed for traction, energy and industrial applications power handling capability www.DataSheet4U.com Optimum Blocking Maximum rated values 1) Symbol VDRM, VRRM dV/dtcrit Parameter Conditions f = 50 Hz, tp = 10 ms Exp. to 1070 V, Tvj = 125°C Symbol Conditions IDRM IRRM 5STP 34H1601 5STP 34H1401 1600 V 1400 V 1000 V/µs min typ 5STP 34H1201 1200 V Characteristic values max 200 200 Unit mA mA Forward leakage current Reverse leakage current VDRM, Tvj = 125°C VRRM, Tvj = 125°C Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 45 typ 50 max 55 50 100 Unit kN m/s m/s Unit kg mm mm 2 2 Parameter Weight Surface creepage distance Symbol Conditions m DS min 36 typ max 0.93 Air strike distance Da 15 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 34H1601 On-state Maximum rated values 1) Parameter Average on-state current RMS on-state current Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current Limiting load integral Characteristic values www.DataSheet4U.com Sy...