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FMM5051VF

Eudyna Devices

13.75-14.5GHz Power Amplifier MMIC

FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm (typ.) High Linear Gain: 31...


Eudyna Devices

FMM5051VF

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FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES High Output Power: 31.5dBm (typ.) High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5051VF is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications in the www.DataSheet4U.com 13.75 to 14.5GHz frequency range. This product is well suited for VSAT applications as it offers high power, high gain, and low VSWR. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Input Power Storage Temperature Operating Case Temperature Symbol VDD VGG Pin Tstg Top Rating 8 -3 8 -65 to +175 -40 to +85 Unit V V dBm °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs modules: 1. The drain operating voltage (VDD) should not exceed 5 volts. 2. The gate operating voltage (VGG) should not exceed 0 volts. ELECTRICAL CHARACTERISTICS (Case Temperature Ta=25°C) Item Frequency Range Output Power (Pin=3dBm) Linear Gain Gain Flatness Input VSWR Output VSWR DC Input Current CASE STYLE: VF Symbol f Pout GL ∆G VSWRi VSWRo IDD VDD = 5V, VGG = 0V VDD = 5V VGG = 0V f =13.75 to 14.5GHz Test Conditions Min. Limit Typ. Max. Unit GHz 2 3:1 3:1 1000 dBm dB dB mA 13.75-14.5 30.8 30.0 31.5 31.5 1.5 2:1 2...




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