Document
Freescale Semiconductor Technical Data
MRF9060 Rev. 8, 12/2004
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applications in 26 volt base station equipment. • Typical Two−Tone Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 17 dB Efficiency — 40% IMD — −31 dBc
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MRF9060LR1 MRF9060LSR1
• Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large−Signal Impedance Parameters • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
945 MHz, 60 W, 26 V LATERAL N−CHANNEL BROADBAND RF POWER MOSFETs
CASE 360B−05, STYLE 1 NI−360 MRF9060LR1
CASE 360C−05, STYLE 1 NI−360S MRF9060LSR1
Table 1. Maximum Ratings
Rating Drain−Source Voltage Gate−Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9060LR1 MRF9060LSR1 Tstg TJ Symbol VDSS VGS PD Value − 0.5, +65 − 0.5, + 15 159 0.91 219 1.25 − 65 to +150 200 Unit Vdc Vdc W W/°C W W/°C °C °C
Storage Temperature Range Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case MRF9060LR1 MRF9060LSR1 Symbol RθJC Value 1.1 0.8 Unit °C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum)
NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2004. All rights reserved.
MRF9060LR1 MRF9060LSR1 5−1
RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate−Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) Gate Quiescent Voltage www.DataSheet4U.com (VDS = 26 Vdc, ID = 450 mAdc) Drain−Source On−Voltage (VGS = 10 Vdc, ID = 1.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) Dynamic Characteristics Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss — — — 98 50 2 — — — pF pF pF (continued) VGS(th) VGS(Q) VDS(on) gfs 2 — — — 2.9 3.7 0.17 5.3 4 — 0.4 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit
MRF9060LR1 MRF9060LSR1 5−2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) Two−Tone Common−Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two−Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, www.DataSheet4U.com f1 = 945.0 MHz, f2 = 945.1 MHz) Two−Tone Common−Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two−Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) Common−Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Gps 16 17 — dB Symbol Min Typ Max Unit
η
36
40
—
%
IMD
—
−31
−28
dBc
IRL
—
−16
−9
dB
Gps
—
17
—
dB
η
—
39
—
%
IMD
—
−31
—
dBc
IRL
—
−16
—
dB
P1dB
—
70
—
W
Gps
—
17
—
dB
η
—
51
—
%
Ψ No Degradation In Output Power
MRF9060LR1 MRF9060LSR1 RF Device Data Freescale Se.