Semiconductor
STK0760P
Advanced Power MOSFET
SWITCHING REGULATOR APPLICATIONS Features
• High Voltage: BVDSS=600V(Min....
Semiconductor
STK0760P
Advanced Power MOSFET
SWITCHING
REGULATOR APPLICATIONS Features
High Voltage: BVDSS=600V(Min.) Low Crss : Crss=12pF(Typ.) Low gate charge : Qg=28nC(Typ.) Low RDS(on) :RDS(on)=1.2Ω(Max.) www.DataSheet4U.com
Ordering Information
Type NO. STK0760P Marking STK0760 Package Code TO-220AB-3L
Outline Dimensions
9.80~10.20 Φ3.70 Max. 8.20~8.60
unit : mm
4.35~4.65 1.20~1.40
6.30~6.70
9.05~9.35
12.68~13.48
1.62 Max. 0.95~1.05 1.49~1.59 1.37 Max. 0.95 Max. 2.20~2.60
9.85~10.15
2.54 Typ. 5.08 Typ.
3.00°
0.40~0.60
2.35~2.45
9.85~10.15
PIN Connections 1. Gate 2. Drain 3. Source
KSD-T0P002-000
1
STK0760P
Absolute maximum ratings
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed)
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*
(Tc=25°C)
Symbol
VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg
Rating
600 ±30 7 3.2 28 65 7 230 7 7.5 150 -55~150
Unit
V V A A A W A mJ A mJ °C
Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
* Limited by maximum junction temperature
Characteristic
Thermal resistance Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-a)
Typ.
-
Max
1.92 83.3
Unit
℃/W
KSD-T0P002-000
2
STK0760P
Electrical Characteristics
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain...