STU405D

S T U405D S amHop Microelectronics C orp. Nov,24 2005 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S www.DataSheet4U.com P R ODUC T S UMMAR Y (P -C hannel) V DS S -40V ID 16A R DS (ON) ( m W ) Max ID -12A R DS (ON) ( m W ) Max 30 @ V G S = 10V 40 @ V G S = 4.5V D1 48 @ V G S = -10V 65 @ V G S = -4.5V D2 40V D1/D2 S1 G1 D1/D2 S 2 G2 G1 TO-252-5L S1 N-ch G2 S2 P -ch ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tc -P ulsed a S ymbol V DS V GS 25 C 70 C ID IDM IS Tc= 25 C Tc= 70 C PD T J , T S TG N-C hannel P-C hannel 40 20 16 13.8 50 8 11 7.7 -55 to 175 -40 20 -12 -10 -50 -6 Unit V V A A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 13.6 120 C /W C /W S T U405D N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg b Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 8A V GS =4.5V, ID= 6A V DS = 5V, V GS = 4.5V V DS = 10V, ID= 8A Min Typ C Max Unit 40 1 V uA 100 nA 1 1.8 22 30 20 20 885 1050 105 65 0.32 16 12 28 7 17 8.6...