Document
SPN6561
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS • Power Management in Note book • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter
FEATURES N-Channel
30V/2.8A,RDS(ON)=60mΩ@VGS=10V 30V/2.3A,RDS(ON)=80mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design
PIN CONFIGURATION(SOT-23-6L)
PART MARKING
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SPN6561
Dual N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6
Symbol G1 S2 G2 D2 S1 D1
Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1
ORDERING INFORMATION
Part Number
Package
SPN6561S26RGB
SOT-23-6L
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPN6561S26RGB : Tape Reel ; Pb – Free ; Halogen - Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃ TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operating Junction Temperature
Storage Temperature Range Thermal Resistance-Junction to Ambient
T ≤ 10sec Steady State
Symbol VDSS VGSS ID
IDM IS PD TJ TSTG RθJA
Part Marking 61
Typical 30
±20 2.8 2.3 10
1.25 1.15 0.75 -55/150 -55/150 50 90
Unit V V A A A W ℃ ℃
℃/W
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SPN6561
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Conditions
Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time
Turn-Off Time
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA IGSS VDS=0V,VGS=±20V
VDS=30V,VGS=1.0V IDSS VTJD=S5=53℃0V,VGS=0.0V
ID(on) RDS(on)
gfs
VDS≧4.5V,VGS=10V VDS≧4.5V,VGS=4.5V VGS = 10V,ID=2.8A VGS =4.5V,ID=2.1A VDS=4.5V,ID=2.5A
VSD IS=1.25A,VGS=0V
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
VDS=15VGS=10V ID≡2.5
VDS=15VGS=0V f=1MHz
VDD=15RL=15 ID≡1.0A,VGEN=10 RG=6Ω
Min. Typ Max. Unit
30 V
1.0
3.0
±100 nA
1 uA
10
6
A
4
0.043 0.060 0.056 0.080
Ω
4.6
S
0.8 1.2 V
4.5
10
0.8
nC
1.0
240
110
pF
17
8
20
12
30 nS
17
35
8
20
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SPN6561
Dual N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2020/02/20 Ver.3
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SPN6561
Dual N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN6561
Dual N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
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SPN6561
Dual N-Channel Enhancement Mode MOSFET
Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation.
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