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AP60N03GS Dataheets PDF



Part Number AP60N03GS
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet AP60N03GS DatasheetAP60N03GS Datasheet (PDF)

AP60N03GS/P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 13.5mΩ 55A ▼ Simple Drive Requirement G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surfac.

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AP60N03GS/P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 13.5mΩ 55A ▼ Simple Drive Requirement G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60N03GP) is available for low-profile applications. GD S TO-263(S) G D TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 30 ±20 55 35 215 62.5 0.5 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.0 62 Units ℃/W ℃/W Data & specifications subject to change without notice 201221041 AP60N03GS/P Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.037 11.5 18 30 22.4 2.7 14 7.4 81 24 18 950 440 145 Max. Units 13.5 20 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) www.DataSheet4U.com Static Drain-Source On-Resistance VGS=10V, ID=28A VGS=4.5V, ID=22A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=28A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=±20V ID=28A VDS=24V VGS=5V VDS=15V ID=28A RG=3.3Ω,VGS=10V RD=0.53Ω VGS=0V VDS=25V f=1.0MHz Gate-Source Forward Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V 1 Min. - Typ. - Max. Units 55 215 1.3 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25℃, IS=55A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP60N03GS/P 200 150 T C =25 C ID , Drain Current (A) 150 o 10V 8.0V ID , Drain Current (A) 100 T C =150 o C 10V 8.0V 6.0V 100 6.0V 50 www.DataSheet4U.com 50 V G =4.0V V G =4.0V 0 0 0 2 4 6 8 0 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 20 1.6 18 I D = 28 A T C =25 o C Normalized R DS(ON) 1.4 I D =28A V G =10V RDS(ON) (mΩ ) 16 1.2 14 1 12 0.8 10 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance 100 3 10 2 1 VGS(th) (V) 1 0 -50 T j =150 C IS (A) o T j =25 C o 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP60N03GS/P 14 f=1.0MHz 10000 I D = 28 A 12 VGS , Gate to Source Voltage (V) 10 8 V DS =16V V DS =20V V DS =24V C (pF) 1000 C iss C oss 6 www.DataSheet4U.com 4 2 C rss 0 0 5 10 15 20 25 30 35 40 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100 0.2 10us ID (A) 100us 1ms T c =25 C Single Pulse o 0.1 0.1 0.05 0.02 10 PDM 0.01 t Single Pulse 10ms 100ms T Duty factor = t/T Peak Tj = PDM x Rthjc + TC 1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform .


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