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BSC119N03SG Dataheets PDF



Part Number BSC119N03SG
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet BSC119N03SG DatasheetBSC119N03SG Datasheet (PDF)

BSC119N03S G OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC for target applications • N-channel www.DataSheet4U.com • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • Pb-free plating; RoHS compliant Type BSC119N03S G Package P-TDSON-8 Ordering Code Q7042 S4292 1) Product Summary V DS R DS(on),ma.

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BSC119N03S G OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC for target applications • N-channel www.DataSheet4U.com • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • Pb-free plating; RoHS compliant Type BSC119N03S G Package P-TDSON-8 Ordering Code Q7042 S4292 1) Product Summary V DS R DS(on),max ID 30 11.9 30 V mΩ A P-TDSON-8 Marking 119N03S Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C T A=25 °C, R thJA=45 K/W 2) Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation I D,pulse E AS dv /dt V GS P tot T C=25 °C T A=25 °C, R thJA=45 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.01 page 1 T j, T stg T C=25 °C3) I D=30 A, R GS=25 Ω I D=30 A, V DS=24 V, di /dt =200 A/µs, T j,max=150 °C Value 30 30 11.9 120 60 6 ±20 43 2.8 -55 ... 150 55/150/56 2004-12-15 °C mJ kV/µs V W Unit A BSC119N03S G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, www.DataSheet4U.com junction Values typ. max. Unit R thJC R thJA minimal footprint 6 cm2 cooling area2) - - 2.9 62 45 K/W - ambient Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=20 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=25 A V GS=10 V, I D=30 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 30 1.2 1.6 0.1 2 1 µA V 22 10 10 14.4 9.9 1 43 100 100 18 11.9 Ω S nA mΩ 1) 2) J-STD20 and JESD22 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 Rev. 1.01 page 2 2004-12-15 BSC119N03S G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse www.DataSheet4U.com transfer capacitance C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=15 A, R G=2.7 Ω V GS=0 V, V DS=15 V, f =1 MHz 1030 370 50 3.8 3.4 15 2.6 1370 490 75 5.8 5.1 23 3.9 ns pF Values typ. max. Unit Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sy.


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