CGD1044H
1 GHz, 25 dB gain high output power doubler
Rev. 01 — 10 October 2007 Product data sheet
1. Product profile
1.1...
CGD1044H
1 GHz, 25 dB gain high output power doubler
Rev. 01 — 10 October 2007 Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V Direct Current (DC), employing Hetero junction Field Effect
Transistor (HFET) GaAs dies.
CAUTION
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This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I I I I I I I High output power capability Excellent linearity Extremely low noise Excellent return loss properties Rugged construction Unconditionally stable Thermal optimized design
1.3 Applications
I CATV systems operating in the 40 MHz to 1000 MHz frequency range
1.4 Quick reference data
Table 1. Quick reference data Bandwidth to 1000 MHz; VB = 24 V (DC); Tmb = 35 °C; unless otherwise specified. Symbol Gp Itot
[1]
Parameter power gain total current
Conditions f = 45 MHz f = 1000 MHz
[1]
Min 24.0 430
Typ 24.0 25.0 450
Max 26.0 470
Unit dB dB mA
Direct Current (DC).
NXP Semiconductors
CGD1044H
1 GHz, 25 dB gain high output power doubler
2. Pinning information
Table 2. Pin 1 2, 3 5 7, 8 9 Pinning Description input common +VB common output
2 3 7 8
sym095
Simplified outline
Symbol
5 1 9
1 3 5 7 9
3. Ordering www.DataSheet4U.com
information
Table 3. Ordering information Package Name CGD1044H Description rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 × 6-32 UNC a...