N-Channel E nhancement Mode Field Effect Transistor
Description
S amHop Microelectronics C orp.
S T U/D1955NL
Arp,12 2005 ver1.2
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
55V
F E AT UR E S
( m W ) Max
ID
10A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
55 @ V G S = 10V 80 @ V G S = 4.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
D
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