BUK7C08-55AITE

BUK7C08-55AITE TrenchPLUS standard level FET M3D323 Rev. 01 — 19 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance and including TrenchPLUS current sensing, and diodes for ESD and overtemperature protection. Product availability: www.DataSheet4U.com BUK7C08-55AITE in SOT427 (D2-PAK). 1.2 Features s Q101 compliant s ESD protection s Integrated temperature sensor s Integrated current sensor. 1.3 Applications s Variable Valve Timing for engines s Automotive and power switching s Electrical Power Assisted Steering s Fan control. 1.4 Quick reference data s VDS ≤ 55 V s ID ≤ 130 A s RDSon = 6.8 mΩ (typ) s VF = 658 mV (typ) s SF = −1.54 mV/K (typ) s ID/Isense = 500 (typ). 2. Pinning information Table 1: Pin 1 2 3 4 mb Pinning - SOT427, simplified outline and symbol Description gate (g) Isense anode (a) drain (d) mounting base; connected to drain (d) Pin 5 6 7 Description cathode (k) d a Simplified outline Symbol Kelvin source source (s) 1 2 3 4 5 6 7 mb g Front view MBK128 MBL362 Isense s k Kelvin source SOT427 (D2-PAK) Philips Semiconductors BUK7C08-55AITE TrenchPLUS standard level FET 3. Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain cu...