(FHZxxV) Silicon Z-Diodes
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FHZ2V4~FHZ39V Silicon Z-Diodes
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Description
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FHZ2V4~FHZ39V Silicon Z-Diodes
Features
Very sharp reverse characteristic Very high stability Low reverse current level VZ-tolerance ± 5%
Applications
Voltage stabilization www.DataSheet4U.com
Absolute Maximum Ratings
Parameter Power dissipation ºÄÉ¢¹¦ÂÊ Z-current ÎÈѹµçÁ÷ Junction temperature ½áΠStorage temperature range ´¢æÎÂ¶È Test Conditions RthJA<300K/W, Tamb=25°C Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 -65...+175 Unit mW mA °C °C
Maximum Thermal Resistance
Parameter Test Conditions Symbol Value Unit RthJA 500 K/W Junction ambient on PC board 50mmx50mmx1.6mm
Electrical Characteristics
Parameter Forward voltage Test Conditions Type Symbol Min Typ Max Unit IF=100mA VF 1.2 V
Type
VZnom1)
Test current IZT
Maximum zeber Impedance
ZZT ZZK at at IZT IZK=1mA IR µA 50 10
Maximum Reverse Leakage Current
Test-Voltage Volts 1.0 1.0
Forward Voltage Vf at If=100mA V 1.2 1.2
Temperature coefficient
V FHZ2V4 2.28-2.56 FHZ2V7 2.5-2.9
mA 5 5
Ohm 85 85
Ohm 600 600
%/°C -0.070 -0.070
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Type
VZnom1)
Test current IZT
Maximum zeber Impedance
ZZT ZZK at at IZT IZK=1mA IR µA 4 2 2 2 1
Maximum Reverse Leakage Current
Test-Voltage Volts 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 5.0 6.0 7.0 7.5 85 90 10 11 12 14 15 17 18 20
Forward Voltage V...
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