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SI6969BDQ

Part Number	SI6969BDQ
Manufacturer	Vishay Siliconix
Description	Dual P-Channel 1.8-V (G-S) MOSFET
Published	Aug 5, 2008
Detailed Description	Si6969BDQ New Product Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.030 @ V...
Datasheet	SI6969BDQ PDF File

Overview

Si6969BDQ New Product Vishay Siliconix Dual P-Channel 1.
8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.
030 @ VGS = -4.
5 V -12 0.
040 @ VGS = -2.
5 V 0.
055 @ VGS = -1.
8 V ID (A) -4.
6 - 3.
8 - 3.
0 S1 S2 www.
DataSheet4U.
com TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 Si6969BDQ ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_...

Similar Datasheet

SI6969BDQ Dual P-Channel 1.8-V (G-S) MOSFET - Vishay Siliconix

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