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SSM6J53FE

Part Number	SSM6J53FE
Manufacturer	Toshiba Semiconductor
Description	High Current Switching Applications
Published	Jul 30, 2008
Detailed Description	SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching Applications ○ Po...
Datasheet	SSM6J53FE PDF File

Overview

SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching Applications ○ Power Management Switch Applications • • • 1.
5 V drive Suitable for high-density mounting due to compact package Unit : mm 1.
6±0.
05 1.
2±0.
05 0.
2±0.
05 0.
5 1.
6±0.
05 1.
0±0.
05 Low on-resistance : Ron = 136 mΩ (max) (@VGS = -2.
5 V) : Ron = 204 mΩ (max) (@VGS = -1.
8 V) : Ron = 364 mΩ (max) (@VGS = -1.
5 V) Symbol VDS VGSS DC Pulse ID IDP PD (Note 1) Tch Tstg Rating -20 ±8 -1.
8 -3.
6 500 150 −55~150 Unit V V A mW °C °C 1 2 3 6 5 4 0.
12±0.
05 www.
DataSheet4U.
com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain powe...

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SSM6J53FE High Current Switching Applications - Toshiba Semiconductor

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