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SRAF0890

Mospec Semiconductor

Dual Schottky Barrier Power Rectifiers

MOSPEC SRAF0870 thru SRAF08100 Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barri...


Mospec Semiconductor

SRAF0890

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Description
MOSPEC SRAF0870 thru SRAF08100 Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 125 Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction. * Plastic Material used Carries Underwriters Laboratory In compliance with EU RoHs 2002/95/EC directives SCHOTTKY BARRIER RECTIFIERS 8 AMPERES 70-100 VOLTS ITO-220AC MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Symbol VRRM VRWM VR 70 70 VR(RMS) 49 Average Rectifier Forward Current IF(AV) Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFM IFSM Operating and Storage Junction Temperature Range TJ , TSTG SRAF08 80 90 80 90 Unit 100 100 V 56 63 70 V 8A 16 A 150 A -65 to +150 ELECTRIAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage ( IF =8 Amp TC = 25 ) ( IF =8 Amp TC = 125 ) Maximum Instant...




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