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SSM6J06FU Dataheets PDF



Part Number SSM6J06FU
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Power Management Switch
Datasheet SSM6J06FU DatasheetSSM6J06FU Datasheet (PDF)

SSM6J06FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J06FU Power Management Switch High Speed Switching Applications • • • Small package Low on resistance : Ron = 0.5 Ω max (VGS = −4 V) : Ron = 0.7 Ω max (VGS = −2.5 V) Low gate threshold voltage www.DataSheet4U.com Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating −20 ±12 −650 −1300 300 150 −55~150.

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SSM6J06FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J06FU Power Management Switch High Speed Switching Applications • • • Small package Low on resistance : Ron = 0.5 Ω max (VGS = −4 V) : Ron = 0.7 Ω max (VGS = −2.5 V) Low gate threshold voltage www.DataSheet4U.com Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating −20 ±12 −650 −1300 300 150 −55~150 Unit V V mA Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range mW °C °C JEDEC ― Note: JEITA ― Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2J1D high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 6.8 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 0.32 mm2 × 6) Figure 1. Note 1: Mounted on FR4 board. Marking Equivalent Circuit Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM6J06FU Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance www.DataSheet4U.com Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = ±12 V, VDS = 0 ID = −1 mA, VGS = 0 VDS = −20 V, VGS = 0 VDS = −3 V, ID = −0.1 mA VDS = −3 V, ID = −0.3 A ID = −0.3 A, VGS = −4 V ID = −0.3 A, VGS = −2.5 V (Note 2) (Note 2) (Note 2) Min ⎯ −20 ⎯ −0.6 0.6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 0.4 0.55 160 25 90 27 43 Max ±1 ⎯ −1 −1.1 ⎯ 0.5 0.7 ⎯ ⎯ ⎯ ⎯ ⎯ Unit μA V μA V S Ω pF pF pF ns VDS = −10 V, VGS = 0, f = 1 MHz VDS = −10 V, VGS = 0, f = 1 MHz VDS = −10 V, VGS = 0, f = 1 MHz VDD = −10 V, ID = −0.3 A, VGS = 0~−2.5 V, RG = 4.7 Ω Note 2: Pulse test Switching Time Test Circuit Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. 2 2007-11-01 SSM6J06FU www.DataSheet4U.com 3 2007-11-01 SSM6J06FU www.DataSheet4U.com 4 2007-11-01 SSM6J06FU www.DataSheet4U.com Figure 1 25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6 5 2007-11-01 SSM6J06FU www.DataSheet4U.com RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instr.


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