Document
SM6G45,SM6J45,SM6G45A,SM6J45A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM6G45,SM6J45,SM6G45A,SM6J45A
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S ON−State Current l High Commutating (dv / dt)
www.DataSheet4U.com MAXIMUM
Unit: mm
: IT (RMS) = 6A
RATINGS
SYMBOL RATING 400 VDRM 600 IT (RMS) ITSM I t di / dt PGM PG (AV) VGM IGM Tj Tstg
2
CHARACTERISTIC SM6G45 SM6G45A SM6J45 SM6J45A
UNIT
Repetitive Peak Off− State Voltage
V
R.M.S On−State Current (Full Sine Waveform Tc = 104°C) Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range
2
6 60 (50Hz) 66 (60Hz) 18 50 5 0.5 10 2 −40~125 −40~125
A A A s A / µs W W V A °C °C
2
JEDEC JEITA TOSHIBA Weight: 2.0g
TO−220AB ― 13−10G1A
1
2001-07-13
SM6G45,SM6J45,SM6G45A,SM6J45A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC Repetitive Peak Off−State Current I SM6G45 SM6J45 Gate Trigger Voltage SM6G45A SM6J45A II III IV I II III IV I SM6G45 SM6J45 Gate Trigger Current SM6G45A SM6J45A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off− State Voltage at Commutation SM6G45 SM6J45 SM6G45A SM6J45A VTM VGD IH Rth (j−c) ITM = 9A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC VDRM = 400V, (di / dt) c = −3.3A / ms Tj = 125°C IGT VD = 12V RL = 20Ω VGT VD = 12V RL = 20Ω SYMBOL IDRM TEST CONDITION VDRM = Rated, Tj = 125°C T2 (+), Gate (+) T2 (+), Gate (−) T2 (−), Gate (−) T2 (−), Gate (+) T2 (+), Gate (+) T2 (+), Gate (−) T2 (−), Gate (−) T2 (−), Gate (+) T2 (+), Gate (+) T2 (+), Gate (−) T2 (−), Gate (−) T2 (−), Gate (+) T2 (+), Gate (+) T2 (+), Gate (−) T2 (−), Gate (−) T2 (−), Gate (+) MIN ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― 0.2 ― ― 10 4 TYP. ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― ― MAX 2 2 2 2 ― 1.5 1.5 1.5 ― 30 30 30 ― 20 20 20 ― 1.5 ― 50 2.5 ― V / µs ― V V mA °C / W mA V UNIT mA
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(dv / dt) c
MARKING
NUMBER *1 *2 SYMBOL SM6G45, SM6G45A TYPE SM6J45, SM6J45A SM6G45A, SM6J45A MARK M6G45 M6J45 A
Example *3 8A : January 1998 8B : Febrary 1998 8L : December 1998
2
2001-07-13
SM6G45,SM6J45,SM6G45A,SM6J45A
www.DataSheet4U.com
3
2001-07-13
SM6G45,SM6J45,SM6G45A,SM6J45A
www.DataSheet4U.com
4
2001-07-13
SM6G45,SM6J45,SM6G45A,SM6J45A
www.DataSheet4U.com
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in whi.