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IXFM11N80

IXYS Corporation
Part Number IXFM11N80
Manufacturer IXYS Corporation
Description Power MOSFET
Published Jul 29, 2008
Detailed Description HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80 I...
Datasheet PDF File IXFM11N80 PDF File

IXFM11N80
IXFM11N80

Overview
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM11N80 IXFM13N80 IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 V DSS 800 V 800 V I D25 11 A 13 A trr £ 250 ns R DS(on) 0.
95 W 0.
80 W Symbol VDSS VDGR VGS VGSM ID25 IDM I AR EAR dv/dt P D TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W T C = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque Maximum Ratings TO-247 AD (IXFH) 800 V 800 V ±20 V ±30 V (TAB) 11N80 11 A 13N80 13 A ...


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