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STPS30170C

ST Microelectronics

High Voltage Power Schottky Rectifier

STPS30170C High voltage power Schottky rectifier Datasheet - production data A1 K A2 TO-247 A2 K A1 K K A2 A1 D2...


ST Microelectronics

STPS30170C

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STPS30170C High voltage power Schottky rectifier Datasheet - production data A1 K A2 TO-247 A2 K A1 K K A2 A1 D2PAK A2 A1 Features  High junction temperature capability  Good trade off between leakage current and forward voltage drop  Low leakage current  Avalanche capability specified  ECOPACK®2 compliant component for D²PAK on demand Description Dual center tap Schottky rectifier designed for high frequency switch mode power supply. Table 1: Device summary Symbol Value IF(AV) VRRM Tj (max) VF (typ) 2 x 15 A 170 V 175 °C 0.69 V May 2017 DocID11640 Rev 2 This is information on a product in full production. 1/13 www.st.com Characteristics STPS30170C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj Repetitive peak reverse voltage Forward rms current Average forward current δ = 0.5, square wave TC = 150 °C Per diode Per device Surge non repetitive forward current tp = 10 ms sinusoidal Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C Storage temperature range Maximum operating junction temperature (1) 170 V 30 A 15 A 30 220 A 750 W -65 to +175 °C +175 °C Notes: (1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Symbol Rth(j-c) Rth(c) Junction to case Coupling Table 3: Thermal parameter Parameter D2PAK TO-247 Per diode D2PAK TO-247 Tota...




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