SUD35N05-26L

SUD35N05-26L New Product Vishay Siliconix N-Channel 55-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 55 FEATURES ID (A)a 35 30 rDS(on) (W) 0.020 @ VGS = 10 V 0.026 @ VGS = 4.5 V D TrenchFETr Power MOSFETS D 175_C Rated Maximum Junction Temperature D Low Input Capacitance APPLICATIONS D Automotive Fuel Injection Systems D Automotive Wipers D Automotive Door Modules D www.DataSheet4U.com TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD35N05-26L S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)b Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C PD TJ, Tstg TC = 25_C TC = 100_C ID IDM IS Symbol VDS VGS Limit 55 "20 35 25 80 35 50c 7.5b –55 to 175 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter t v 10 sec Junction-to-Ambientb Junction-to-Case Junction-to-Lead Notes a. Package Limited. b. Surface Mounted on 1” x1” FR4 Board, t v 10 sec. c. See SOA curve for voltage derating. Document Number: 71443 S-03485—Rev. A,16-Apr-01 www.vishay.com Steady State RthJA RthJC RthJL Symbol Typical 17 50 2.5 5.0 Maximum 20 60 3.0 6.0 Unit _C/W 1 SUD35N05-26L Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gat...