N-Channel Enhancement Mode MOSFET
GFD50N03A
N-Channel Enhancement-Mode MOSFET
H C N T E TRE ENF
VDS 30V RDS(ON) 7mΩ ID 78A
D
®
G
TO-252 (DPAK)
0.265...
Description
GFD50N03A
N-Channel Enhancement-Mode MOSFET
H C N T E TRE ENF
VDS 30V RDS(ON) 7mΩ ID 78A
D
®
G
TO-252 (DPAK)
0.265 (6.73) 0.255 (6.48) 0.214 (5.44) 0.206 (5.23)
0.094 (2.39) 0.087 (2.21) 0.023 (0.58) 0.018 (0.46) 0.050 (1.27) 0.035 (0.89)
t c u rod P New
G
S
0.190 (4.826)
www.DataSheet4U.com D
0.170 (4.32) min. 0.245 (6.22) 0.235 (5.97) 0.410 (10.41) 0.380 (9.65) 0.197 (5.00) 0.177 (4.49)
0.165 (4.191)
G
S
0.060 (1.52) 0.045 (1.14)
0.100 (2.54)
0.035 (0.89) 0.028 (0.71) 0.204 (5.18) 0.156 (3.96)
0.118 (3.0)
0.040 (1.02) 0.025 (0.64) 0.023 (0.58) 0.018 (0.46) 0.045 (1.14) 0.035 (0.89) 0.020 (0.51) min. 0.009 (0.23) 0.001 (0.03)
Dimensions in inches and (millimeters)
0.243 (6.172)
0.063 (1.6)
Mounting Pad Layout
Mechanical Data
Case: JEDEC TO-252 molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Weight: 0.011oz., 0.4g
Features
Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Voltage DC/DC Converters Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (T
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation TC = 25°C TC = 70°C Symbol VDS VGS ID IDM PD TJ, Tstg RθJC
(2)
C
= 25°C unless otherwise noted)
Limit 30
± 20
Unit V
78 180 70 45 –55 to 150 1.8 40
A W °C °C/W °C/W 5/1/0...
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