ES25P80

E ES S II ADVANCED INFORMATION Excel Semiconductor inc. ES25P80 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface www.DataSheet4U.com ARCHITECTURAL ADVANTAGES Single power supply operation - 2.7V -3.6V for read and program operations Memory Architecture - Sixteen sectors with 512 Kb each Program - Page program ( up to 256 bytes) in 1.5ms (typical) - Program cycles are on a page by page basis Erase - 0.5s typical sector erase time - 6s typical bulk erase time Endurance - 100,000 cycles per sector (typical) Data Retention - 20 years (typical) Parameter Page - 256 Byte page independent from main memory for parameter storage - Seperate from array, erase time < 20ms Device ID - JEDEC standard two-byte electronic signature - RES instruction one-byte electronic signature for backward compatibility - Manufacturer and device type ID Process Technology - Manufactured on 0.18um process technology Package Option - Industry Standard Pinouts - 8-pin SO (208mil) package - All Pb-Free devices are RoHS Compliant PERFORMANCE CHARACTERISTICS Speed - 75Mhz clock rate (maximum) Power Saving Standby Mode - Standby mode 50uA (max) - Deep Power Down Mode 1uA (typical) MEMORY PROTECTION FEATURES Memory Protection - W# pin works in conjunction with Status Register Bits to protect specified memory areas - Status Register Block Protection Bits (BP2, BP1, BP0) in status register configure parts of memory as read only SOFTWARE FEATURES SPI Bus Compatible Seria...