IXFR26N60Q

HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances VDSS = 600 V ID25 = 23 A RDS(on) = 250 mW trr £ 250 ns www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 600 600 ±20 ±30 23 92 26 45 1.5 5 310 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ g ISOPLUS 247TM E153432 G = Gate S = Source * Patent pending D = Drain 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min 250 2500 5 Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching Low drain to tab capacitance(<30pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Rated for Unclamped Inductive Load Switching (UIS) Fast intrinsic Rectifier Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC & DC motor control Advantages Easy assembly Space savings High power density 98727 (06/09/00) Symbol Test ...