iTR39100

iTR39100 37-40 GHz 1 Watt Power Amplifier MMIC Description The iTR39100 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The iTR39100 is a 3stage GaAs MMIC amplifier utilizing an advanced 0.15μm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output. 18 dB small signal gain (typ.) 30 dBm saturated power out (typ.) Circuit contains individual source vias Chip Size 4.28 mm x 3.19 mm x 50 μm Features www.DataSheet4U.com Absolute Ratings Parameter Positive DC Voltage (+5 V Typical) Negative DC Voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 Ω source) Operating Base plate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Symbol Vd Vg Vdg ID PIN TC TStg Rjc Value +6 -2 +8 1392 18 -30 to +85 -55 to +125 9 Unit Volts Volts Volts mA dBm °C °C °C/W (At 25°C) 50 Ω system, Vd=+5 V, Quiescent current (Idq) = 1000 mA Electrical Characteristics Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal Pin=0 dBm Gain Variation vs. Frequency Power Output at P1 dB Compression Power Output Saturated (Pin=+14.5 dBm) Drain Current at Pin=0 dBm Min 37 Typ -0.2 Max 40 Unit GHz V dB dB dBm dBm mA Parameter Drain Current at P1 dB Compression Drain Current at Psat Power Added Efficiency (PAE) at P1dB OIP3 (17 dBm/Tone) (10 ...