Document
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM300GA120DLC
vorläufige Daten preliminary data
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES TC = 80 °C TC = 25 °C tP = 1 ms, TC = 80°C IC,nom. IC ICRM 1200 300 570 600 V A A A
www.DataSheet4U.com
Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prüfspannung insulation test voltage
TC=25°C, Transistor
Ptot
2270
W
VGES
+/- 20V
V
IF
300
A
tP = 1 ms
IFRM
600
A
VR = 0V, t p = 10ms, T Vj = 125°C
2 I t
19
kA2s
RMS, f = 50 Hz, t = 1 min.
VISOL
2,5
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 300A, V GE = 15V, Tvj = 25°C IC = 300A, V GE = 15V, Tvj = 125°C IC = 12mA, V CE = VGE, Tvj = 25°C VGE(th) VCE sat
min.
4,5
typ.
2,1 2,4 5,5
max.
2,6 t.b.d. 6,5 V V V
VGE = -15V...+15V
QG
-
t.b.d.
-
µC
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V
Cies
-
22
-
nF
f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V VCE = 1200V, V GE = 0V, Tvj = 25°C VCE = 1200V, V GE = 0V, Tvj = 125°C VCE = 0V, V GE = 20V, Tvj = 25°C
Cres ICES
-
t.b.d. 20 500 -
500 400
nF µA µA nA
IGES
-
prepared by: Mark Münzer approved by: Jens Thurau
date of publication: 18.02.1999 revision: 1
1(8)
DB_BSM300GA120DLC_V.xls
Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM300GA120DLC
vorläufige Daten preliminary data
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 300A, V CC = 600V VGE = ±15V, RG = 3,3 Ω, Tvj = 25°C VGE = ±15V, RG = 3,3 Ω, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 300A, V CC = 600V VGE = ±15V, RG = 3,3 Ω, Tvj = 25°C VGE = ±15V, RG = 3,3 Ω, Tvj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 300A, V CC = 600V VGE = ±15V, RG = 3,3 Ω, Tvj = 25°C VGE = ±15V, RG = 3,3 Ω, Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 300A, V CC = 600V VGE = ±15V, RG = 3,3 Ω, Tvj = 25°C VGE = ±15V, RG = 3,3 Ω, Tvj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data Mo.