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BSM300GA120DLC Dataheets PDF



Part Number BSM300GA120DLC
Manufacturers eupec GmbH
Logo eupec GmbH
Description IGBT-Modules
Datasheet BSM300GA120DLC DatasheetBSM300GA120DLC Datasheet (PDF)

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM300GA120DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES TC = 80 °C TC = 25 °C tP = 1 ms, TC = 80°C IC,nom. IC ICRM 1200 300 570 600 V A A A www.DataSheet4U.com Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector cur.

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Technische Information / Technical Information IGBT-Module IGBT-Modules BSM300GA120DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES TC = 80 °C TC = 25 °C tP = 1 ms, TC = 80°C IC,nom. IC ICRM 1200 300 570 600 V A A A www.DataSheet4U.com Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prüfspannung insulation test voltage TC=25°C, Transistor Ptot 2270 W VGES +/- 20V V IF 300 A tP = 1 ms IFRM 600 A VR = 0V, t p = 10ms, T Vj = 125°C 2 I t 19 kA2s RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 300A, V GE = 15V, Tvj = 25°C IC = 300A, V GE = 15V, Tvj = 125°C IC = 12mA, V CE = VGE, Tvj = 25°C VGE(th) VCE sat min. 4,5 typ. 2,1 2,4 5,5 max. 2,6 t.b.d. 6,5 V V V VGE = -15V...+15V QG - t.b.d. - µC f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V Cies - 22 - nF f = 1MHz,Tvj = 25°C,V CE = 25V, V GE = 0V VCE = 1200V, V GE = 0V, Tvj = 25°C VCE = 1200V, V GE = 0V, Tvj = 125°C VCE = 0V, V GE = 20V, Tvj = 25°C Cres ICES - t.b.d. 20 500 - 500 400 nF µA µA nA IGES - prepared by: Mark Münzer approved by: Jens Thurau date of publication: 18.02.1999 revision: 1 1(8) DB_BSM300GA120DLC_V.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM300GA120DLC vorläufige Daten preliminary data Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 300A, V CC = 600V VGE = ±15V, RG = 3,3 Ω, Tvj = 25°C VGE = ±15V, RG = 3,3 Ω, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 300A, V CC = 600V VGE = ±15V, RG = 3,3 Ω, Tvj = 25°C VGE = ±15V, RG = 3,3 Ω, Tvj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 300A, V CC = 600V VGE = ±15V, RG = 3,3 Ω, Tvj = 25°C VGE = ±15V, RG = 3,3 Ω, Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 300A, V CC = 600V VGE = ±15V, RG = 3,3 Ω, Tvj = 25°C VGE = ±15V, RG = 3,3 Ω, Tvj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data Mo.


SZ5Axx BSM300GA120DLC MPG06A


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