AON3814

AON3814 20V Dual N-Channel MOSFET General Description Product Summary The AON3814 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. VDS ID (at VGS=4.5V) RDS(ON) (at VGS = 4.5V) RDS(ON) (at VGS = 4V) RDS(ON) (at VGS = 3.1V) RDS(ON) (at VGS = 2.5V) ESD Protected 20V 6A < 17mW < 18.5mW < 23mW < 24mW Top View DFN 3x3 Bottom View Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D2 D2 G1 D1 D1 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current F TC=70°C Pulsed Drain Current B ID IDM TC=25°C Power Dissipation F TC=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 6 5.3 40 2.5 1.6 -55 to 150 D1 G2 S1 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Typ 40 75 30 Max 50 95 40 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Rev 6.0:July 2019 www.aosmd.com Page 1 of 5 AON3814 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain C...