AON6710

SRFET AON6710 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFETTM The AON6710/L uses advanced trench technology with a monolithically integrated Schottky www.DataSheet4U.com diode to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a low side FET in SMPS, load switchng and general purpose applications. AON6710 and AON6710L are electrically identical. -RoHS Compliant -AON6710L is Halogen Free Features VDS (V) = 30V ID = 20A (VGS = 10V) RDS(ON) < 4.7mΩ (VGS = 10V) RDS(ON) < 6.7mΩ (VGS = 4.5V) Top View Fits SOIC8 footprint ! S S S G D D D D G D SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode S DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain BJ Current TC=25°C TC=100°C ID IDM IDSM IAR C Maximum 30 ±20 30 30 100 19 15 30 135 62 25 2.5 1.6 -55 to 150 Units V V A Pulsed Drain Current Continuous Drain TA=25°C H Current TA=70°C C Avalanche Current Repetitive avalanche energy L=0.3mH Power Dissipation B A A mJ W W °C EAR PD PDSM TJ, TSTG TC=25°C TC=100°C TA=25°C TA=70°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Case C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14.2 42 1.2 Max 20 50 2.0 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON6...