AON7400

AON7400 N-Channel Enhancement Mode Field Effect Transistor General Description The AON7400 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in SMPS and www.DataSheet4U.com general purpose applications. Standard Product AON7400 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V (VGS = 10V) ID = 10A RDS(ON) < 12.5mΩ (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 4.5V) DFN 3x3 Top View Bottom View D Pin 1 S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,H Pulsed Drain Current Continuous Drain Current G Power Dissipation Power Dissipation B Maximum 30 ±12 20 16 80 10 9 35 14 3.1 2 -55 to 150 Units V V TC=25°C TC=100°C C ID IDM IDSM PD PDSM TJ, TSTG A TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C A W TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D °C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 30 60 3 Max 40 75 3.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON7400 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=10A Static Drain-Source On-Resistance VGS=4.5V, I...