20V N-Channel MOSFET
AON3402
20V N-Channel MOSFET
General Description
The AON3402 uses advanced trench technology to provide excellent RDS(O...
Description
AON3402
20V N-Channel MOSFET
General Description
The AON3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.This device is suitable for use as load switch and general purpose FET application.
Product Summary
VDS (V) = 20V ID = 12.6A (VGS = 4.5V) RDS(ON) < 13mW (VGS = 4.5V) RDS(ON) < 17mW (VGS = 2.5V) RDS(ON) < 26mW (VGS = 1.8V)
ESD Rating: 2000V HBM 100% Rg Tested
Top View
DFN 3x3 Bottom View
Top View
S1 S2 S3 G4
8D
7D
6D
G
5D
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
TA=25°C Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum 20 ±12 12.6 10 40 3.1 2
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
t ≤ 10s Steady-State
RqJA
30 65
40 80
Maximum Junction-to-Lead C
Steady-State
RqJL
20
25
D
S
Units V V A
W °C
Units °C/W °C/W °C/W
Rev.2.1: January 2024
www.aosmd.com
Page 1 of 4
AON3402
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS IDSS IGSS BVGSO VGS(th) ID(ON)
RDS(ON)
gFS VSD IS
Drain-Source Breakdown Voltage
ID=250mA, VGS=0V
20
Zero Gate Voltage Drain Current
VDS=16V, VGS=0V...
Similar Datasheet