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SUR6020

Sirectifier Semiconductors

Ultra Fast Recovery Epitaxial Diodes

SUR6020 Ultra Fast Recovery Epitaxial Diodes Dimensions TO-247AC A C(TAB) C www.DataSheet4U.com Dim. A B C D E F G H J ...


Sirectifier Semiconductors

SUR6020

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SUR6020 Ultra Fast Recovery Epitaxial Diodes Dimensions TO-247AC A C(TAB) C www.DataSheet4U.com Dim. A B C D E F G H J K L M N C Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 A A=Anode, C=Cathode, TAB=Cathode VRSM V 200 VRRM V 200 SUR6020 Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 98 60 800 600 650 540 580 1800 1770 1460 1410 -40...+150 150 -40...+150 Unit A IFSM TVJ=150oC TVJ=45oC A I2t TVJ=150oC A2s TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque o C 150 0.8...1.2 6 W Nm g SUR6020 Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=60A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 50 40 11 0.88 1.08 0.70 4.0 0.75 0.25 35 Unit uA uA mA V V m K/W IR VF www.DataSheet4U.com VTO rT RthJC RthCK RthJA trr IRM IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC _ VR=100V; IF=60A; -diF/dt=200A/us; L<0.05uH; TVJ=100 C o...




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