Document
E ES S II
Excel Semiconductor inc.
ES29LV800D
8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
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GENERAL FEATURES
• Single power supply operation - 2.7V -3.6V for read, program and erase operations
• Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC
SOFTWARE FEATURES
• Sector Structure - 16Kbyte x 1, 8Kbyte x 2, 32Kbyte x 1 boot sectors - 64Kbyte x 15sectors • Top or Bottom boot block - ES29LV800DT for Top boot block device - ES29LV800DB for Bottom boot block device • Package Options - 48-pin TSOP - 48-ball FBGA ( 6 x 8 mm ) - Pb-free packages - All Pb-free products are RoHS-Compliant • Low Vcc write inhibit • Manufactured on 0.18um process technology • Compatible with JEDEC standards - Pinout and software compatible with single-power supply flash standard • • • • • Erase Suspend / Erase Resume Data# poll and toggle for Program/erase status Unlock Bypass program Autoselect mode Auto-sleep mode after tACC + 30ns
HARDWARE FEATURES
• Hardware reset input pin ( RESET#) - Provides a hardware reset to device - Any internal device operation is terminated and the device returns to read mode by the reset • Ready/Busy# output pin ( RY/BY#) - Provides a program or erase operational status about whether it is finished for read or still being progressed • Sector protection / unprotection ( RESET# , A9 ) - Hardware method of locking a sector to prevent any program or erase operation within that sector - Two methods are provided : - In-system method by RESET# pin - A9 high-voltage method for PROM programmers • Temporary Sector Unprotection ( RESET# ) - Allows temporary unprotection of previously protected sectors to change data in-system
DEVICE PERFORMANCE
• Read access time - 70ns / 90ns / 120ns • Program and erase time - Program time : 6us/byte, 8us/word ( typical ) - Sector erase time : 0.7sec/sector ( typical ) • Power consumption (typical values) - 200nA in standby or automatic sleep mode - 7mA active read current at 5 MHz - 15mA active write current during program or erase
ES29LV800D
1
Rev. 1D January 5, 2006
E ES S II
Excel Semiconductor inc.
GENERAL PRODUCT DESCRIPTION
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The ES29LV800 is a 8 megabit, 3.0 volt-only flash memory device, organized as 1M x 8 bits (Byte mode) or 512K x 16 bits (Word mode) which is configurable by BYTE#. Four boot sectors and fifteen main sectors are provided : 16Kbytes x 1, 8Kbytes x 2, 32Kbytes x 1 and 64Kbytes x 15. The device is manufactured with ESI’s proprietary, high performance and highly reliable 0.18um CMOS flash technology. The device can be programmed or erased in-system with standard 3.0 Volt Vcc supply ( 2.7V-3.6V) and can also be programmed in standard EPROM programmers. The device offers minimum endurance of 100,000 program/erase cycles and more than 10 years of data retention. The ES29LV800 offers access time as fast as 70ns or 90ns, allowing operation of high-speed microprocessors without wait states. Three separate control pins are provided to eliminate bus contention : chip enable (CE#), write enable (WE#) and output enable (OE#). All program and erase operation are automatically and internally performed and controlled by embedded program/erase algorithms built in the device. The device automatically generates and times the necessary high-voltage pulses to be applied to the cells, performs the verification, and counts the number of sequences. Some status bits (DQ7, DQ6 and DQ5) read by data# polling or toggling between consecutive read cycles provide to the users the internal status of program/erase operation: whether it is successfully done or still being progressed.
The ES29LV800 is completely compatible with the JEDEC standard command set of single power supply Flash. Commands are written to the internal command register using standard write timings of microprocessor and data can be read out from the cell array in the device with the same way as used in other EPROM or flash devices.
ES29LV800D
2
Rev. 1D January 5, 2006
E ES S II
Excel Semiconductor inc.
PRODUCT SELECTOR GUIDE
Family Part Number Voltage Range Speed Option Max Access Time (ns) CE# Access (ns) OE# Access (ns)
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ES29LV800 2.7 ~ 3.6V 70 70 70 30 90 90 90 35 120 120 120 50
FUNCTION BLOCK DIAGRAM
RY/BY# Vcc Vss Vcc Detector Timer/ Counter DQ0-DQ15(A-1)
Analog Bias Generator WE# RESET# Command Register Write State Machine
Input/Output Buffers
Sector Switches
Data Latch/ Sense Amps
Y-Decoder A<0:18>
Y-Decoder
Address Latch
CE# OE# BYTE#
X-Decoder
Cell Array
Chip Enable Output Enable Logic
ES29LV800D
3
Rev. 1D January 5, 2006
E ES S II
Excel Semiconductor inc.
PIN DESCRIPTION
Pin
A0-A18 DQ0-DQ14 DQ15/A-1 CE# OE# 19 Addresses 15 Data Inputs/Outputs DQ15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode) Chip Enable Output Enable Write Enable Hardware Reset Pin, Active Low Selects 8-bit or 16-bit mode Ready/Busy Output 3.0 volt-only single power supply .