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ES29LV320D Dataheets PDF



Part Number ES29LV320D
Manufacturers Excel Semiconductor
Logo Excel Semiconductor
Description Boot Sector Flash Memory
Datasheet ES29LV320D DatasheetES29LV320D Datasheet (PDF)

E ES S II Excel Semiconductor inc. ES29LV320D 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory www.DataSheet4U.com GENERAL FEATURES • Single power supply operation - 2.7V -3.6V for read, program and erase operations • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC SOFTWARE FEATURES • Sector Structure - 8Kbyte x 8 boot sectors - 64Kbyte x 63 sectors - 256byte security sector • Top or Bottom boot block - ES29LV320DT for Top boot block devi.

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E ES S II Excel Semiconductor inc. ES29LV320D 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory www.DataSheet4U.com GENERAL FEATURES • Single power supply operation - 2.7V -3.6V for read, program and erase operations • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC SOFTWARE FEATURES • Sector Structure - 8Kbyte x 8 boot sectors - 64Kbyte x 63 sectors - 256byte security sector • Top or Bottom boot block - ES29LV320DT for Top boot block device - ES29LV320DB for Bottom boot block device • A 256 bytes of extra sector for security code - Factory lockable - Customer lockable • Package Options - 48-pin TSOP - Pb-free packages - All Pb-free products are RoHS-Compliant • Low Vcc write inhibit • Manufactured on 0.18um process technology • Compatible with JEDEC standards - Pinout and software compatible with single-power supply flash standard • • • • • • Erase Suspend / Erase Resume Data# poll and toggle for Program/erase status CFI ( Common Flash Interface) supported Unlock Bypass program Autoselect mode Auto-sleep mode after tACC + 30ns HARDWARE FEATURES • Hardware reset input pin ( RESET#) - Provides a hardware reset to device - Any internal device operation is terminated and the device returns to read mode by the reset • Ready/Busy# output pin ( RY/BY#) - Provides a program or erase operational status about whether it is finished for read or still being progressed • WP#/ACC input pin - Two outermost boot sectors are protected when WP# is set to low, regardless of sector protection - Program speed is accelerated by raising WP#/ACC to a high voltage (12V) • Sector protection / unprotection ( RESET# , A9 ) - Hardware method of locking a sector to prevent any program or erase operation within that sector - Two methods are provided : - In-system method by RESET# pin - A9 high-voltage method for PROM programmers • Temporary Sector Unprotection ( RESET# ) - Allows temporary unprotection of previously protected sectors to change data in-system DEVICE PERFORMANCE • Read access time - 90ns/120n for normal Vcc range ( 2.7V - 3.6V ) - 80ns for regulated Vcc range ( 3.0V - 3.6V ) • Program and erase time - Program time : 9us/byte, 11us/word ( typical ) - Accelerated program time : 8us/word ( typical ) - Sector erase time : 0.7sec/sector ( typical ) • Power consumption (typical values) - 200nA in standby or automatic sleep mode - 10 mA active read current at 5 MHz - 15mA active write current during program or erase ES29LV320D 1 Rev. 2D Jan 5, 2006 E ES S II Excel Semiconductor inc. GENERAL PRODUCT DESCRIPTION www.DataSheet4U.com The ES29LV320 is a 32 megabit, 3.0 volt-only flash memory device, organized as 4M x 8 bits (Byte mode) or 2M x 16 bits (Word mode) which is configurable by BYTE#. Eight boot sectors and sixty three main sectors with uniform size are provided : 8Kbytes x 8 and 64Kbytes x 63. The device is manufactured with ESI’s proprietary, high performance and highly reliable 0.18um CMOS flash technology. The device can be programmed or erased in-system with standard 3.0 Volt Vcc supply ( 2.7V-3.6V) and can also be programmed in standard EPROM programmers. The device offers minimum endurance of 100,000 program/erase cycles and more than 10 years of data retention. The ES29LV320 offers access time as fast as 80ns or 90ns, allowing operation of high-speed microprocessors without wait states. Three separate control pins are provided to eliminate bus contention : chip enable (CE#), write enable (WE#) and output enable (OE#). All program and erase operation are automatically and internally performed and controlled by embedded program/erase algorithms built in the device. The device automatically generates and times the necessary high-voltage pulses to be applied to the cells, performs the verification, and counts the number of sequences. Some status bits (DQ7, DQ6 and DQ5) read by data# polling or toggling between consecutive read cycles provide to the users the internal status of program/erase operation: whether it is successfully done or still being progressed. Extra Security Sector of 256 bytes In the device, an extra security sector of 256 bytes is provided to customers. This extra sector can be used for various purposes such as storing ESN (Electronic Serial Number) or customer’s security codes. Once after the extra sector is written, it can be permanently locked by the device manufacturer( factory-locked) or a customer( customer-lockable). At the same time, a lock indicator bit (DQ7) is permanently set to a 1 if the part is factory- locked, or set to 0 if it is customer-lockable. Therefore, this lock indicator bit (DQ7) can be properly used to avoid that any customer-lockable part is used to replace a factory-locked part. The extra security sector is an extra memory space for customers when it is used as a customer-lockable version. So, it can be read and written like any other sectors. But it should be noted that the number of E/W(Erase and Write) cyc.


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