Document
E ES S II
Excel Semiconductor inc.
ES29LV320D
32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
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GENERAL FEATURES
• Single power supply operation - 2.7V -3.6V for read, program and erase operations
• Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC
SOFTWARE FEATURES
• Sector Structure - 8Kbyte x 8 boot sectors - 64Kbyte x 63 sectors - 256byte security sector • Top or Bottom boot block - ES29LV320DT for Top boot block device - ES29LV320DB for Bottom boot block device • A 256 bytes of extra sector for security code - Factory lockable - Customer lockable • Package Options - 48-pin TSOP - Pb-free packages - All Pb-free products are RoHS-Compliant • Low Vcc write inhibit • Manufactured on 0.18um process technology • Compatible with JEDEC standards - Pinout and software compatible with single-power supply flash standard • • • • • • Erase Suspend / Erase Resume Data# poll and toggle for Program/erase status CFI ( Common Flash Interface) supported Unlock Bypass program Autoselect mode Auto-sleep mode after tACC + 30ns
HARDWARE FEATURES
• Hardware reset input pin ( RESET#) - Provides a hardware reset to device - Any internal device operation is terminated and the device returns to read mode by the reset • Ready/Busy# output pin ( RY/BY#) - Provides a program or erase operational status about whether it is finished for read or still being progressed • WP#/ACC input pin - Two outermost boot sectors are protected when WP# is set to low, regardless of sector protection - Program speed is accelerated by raising WP#/ACC to a high voltage (12V) • Sector protection / unprotection ( RESET# , A9 ) - Hardware method of locking a sector to prevent any program or erase operation within that sector - Two methods are provided : - In-system method by RESET# pin - A9 high-voltage method for PROM programmers • Temporary Sector Unprotection ( RESET# ) - Allows temporary unprotection of previously protected sectors to change data in-system
DEVICE PERFORMANCE
• Read access time - 90ns/120n for normal Vcc range ( 2.7V - 3.6V ) - 80ns for regulated Vcc range ( 3.0V - 3.6V ) • Program and erase time - Program time : 9us/byte, 11us/word ( typical ) - Accelerated program time : 8us/word ( typical ) - Sector erase time : 0.7sec/sector ( typical ) • Power consumption (typical values) - 200nA in standby or automatic sleep mode - 10 mA active read current at 5 MHz - 15mA active write current during program or erase
ES29LV320D
1
Rev. 2D Jan 5, 2006
E ES S II
Excel Semiconductor inc.
GENERAL PRODUCT DESCRIPTION
www.DataSheet4U.com
The ES29LV320 is a 32 megabit, 3.0 volt-only flash memory device, organized as 4M x 8 bits (Byte mode) or 2M x 16 bits (Word mode) which is configurable by BYTE#. Eight boot sectors and sixty three main sectors with uniform size are provided : 8Kbytes x 8 and 64Kbytes x 63. The device is manufactured with ESI’s proprietary, high performance and highly reliable 0.18um CMOS flash.