SST31LF021

2 Mbit Flash + 1 Mbit SRAM ComboMemory SST31LF021 / SST31LF021E SST31LF021 / 021E2 Mb Flash (x8) + 1 Mb SRAM (x8) Monolithic ComboMemories Data Sheet FEATURES: Monolithic Flash + SRAM ComboMemory – SST31LF021/021E: 256K x8 Flash + 128K x8 SRAM Single 3.0-3.6V Read and Write Operations Concurrent Operation – Read from or Write to SRAM while Erase/Program Flash Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention www.DataSheet4U.com Low Power Consumption: – Active Current: 10 mA (typical) for Flash and 20 mA (typical) for SRAM Read – Standby Current: 10 µA (typical) Flash Sector-Erase Capability – Uniform 4 KByte sectors Latched Address and Data for Flash Fast Read Access Times: – SST31LF021 Flash: 70 ns SRAM: 70 ns – SST31LF021E Flash: 300 ns SRAM: 300 ns Flash Fast Erase and Byte-Program: – Sector-Erase Time: 18 ms (typical) – Bank-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Bank Rewrite Time: 4 seconds (typical) Flash Automatic Erase and Program Timing – Internal VPP Generation Flash End-of-Write Detection – Toggle Bit – Data# Polling CMOS I/O Compatibility JEDEC Standard Command Set Package Available – 32-lead TSOP (8mm x 14mm) PRODUCT DESCRIPTION The SST31LF021/021E devices are a 256K x8 CMOS flash memory bank combined with a 128K x8 or 32K x8 CMOS SRAM memory bank manufactured with SST’s proprietary, high performance SuperFlash technology. Two pinout standards are available...