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IPP13N03LBG

Infineon Technologies
Part Number IPP13N03LBG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Jul 16, 2008
Detailed Description IPP13N03LB G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to J...
Datasheet PDF File IPP13N03LBG PDF File

IPP13N03LBG
IPP13N03LBG


Overview
IPP13N03LB G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) com Product Summary V DS R DS(on),max ID 30 12.
8 30 V mΩ A • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating; RoHS compliant PG-TO220-3-1 Type IPP13N03LB G Package PG-TO220-3-1 Marking 13N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, s...



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