2SC5450

Ordering number:EN5955 NPN Triple Diffused Planar Silicon Transistor 2SC5450 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process. www.DataSheet4U.com Package Dimensions unit:mm 2039D [2SC5450] 3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Conditions 3.5 Ratings 1600 800 6 10 25 3.0 70 150 –55 to +150 2.0 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector Cutoff Current Collector-to-Emitter Sustain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol ICBO ICES VCB=800V, IE=0 VCE=1600V, RBE=0 800 1.0 5 1.5 Conditions Ratings min typ max 10 1.0 Unit µA mA V mA V V VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 VCE(sat) IC=7A, IB=1.75A VBE(sat) IC=7A, IB=1.75A Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extrem...