C4020

2SC4020 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj 2SC4020 900 800 7 3(Pulse 6) 1.5 50(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) 2SC4020 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 40typ V MHz pF 2.5 B C E 12.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=0.7A IC=0.7A, IB=0.14A IC=0.7A, IB=0.14A VCE=12V, IE=–0.3A VCB=10V, f=1MHz External Dimensions MT-25(TO220) 3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1 Unit µA µA V 16.0±0.7 8.8±0.2 a b ø3.75±0.2 V 1.35 www.DataSheet4U.com Tstg 0.65 +0.2 -0.1 2.5 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 357 IC (A) 0.7 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.1 IB2 (A) –0.35 ton (µs) 1max tstg (µs) 5max tf (µs) 1max Weight : Approx 2.6g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 3 5 m 00 A 40 0m A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t) (V ) Base-Emitter Saturation Voltage V B E (s a t) (V ) 2 (I C /I B =5) I C – V BE Temperature Characteristics (Typical) 3 (V C E =4V) 300m A Collector Current I C (A) 2 200 mA Collector Current I C (A) 2 140mA 100mA mp) e Te 1 V B E (sat) 25˚C (C I B =20mA V C E (sat) 0 0.03 0.05 0.1 0.5 1 5 0 0 0.2 0.4...