N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH™III MOSFET
TYPE STW8NC90Z
www.DataSheet4U.com s TYPICAL
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Description
N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH™III MOSFET
TYPE STW8NC90Z
www.DataSheet4U.com s TYPICAL
s
STW8NC90Z
VDSS 900 V
RDS(on) < 1.38 Ω
ID 7.6 A
s s s
RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247
DESCRIPTION The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (*) Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 900 900 ±25 7.6 4.8 30 190 1.51 ±50 4 3 –65 to 150 150 Unit V V V A A A W W/°C mA KV V/ns °C °C
()Pulse width limited by safe operating area (1)ISD ≤7.6A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (*)Limited...
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