CSC1009

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS CSA709 PNP CSC1009 NPN TO-92 CBE www.DataSheet4U.com High Voltage Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C ) DESCRIPTION SYMBOL CSA709 CSC1009 VCBO 160 160 Collector -Base Voltage VCEO 150 140 Collector -Emitter Voltage VEBO 8.0 8.0 Emitter -Base Voltage IC 700 700 Collector Current PC 800 800 Collector Dissipation Tj, Tstg -55 to +150 -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION CSA709 CSC1009 VCBO IC=100uA.IE=0 >160 >160 Collector -Base Voltage VCEO IC=10mA,IB=0 >150 >140 Collector -Emitter Voltage VEBO IE=100uA, IC=0 >8.0 >8.0 Emitter-Base Voltage ICBO VCB=60V, IE=0 <100 Collector-Cut off Current VCB=100V, IE=0 <100 IEBO VEB=5V, IC=0 <100 <100 Emitter-Cut off Current hFE* IC=50mA,VCE=2V 40-400 40-400 DC Current Gain <0.4 <0.7 Collector Emitter Saturation Voltage VCE(Sat)* IC=200mA,IB=20mA VBE(Sat) * IC=200mA,IB=20mA <1.1 <1.1 Base Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Transition Frequency Out-Put Capacitance UNIT V V V mA mW deg C UNIT V V V nA nA nA V V ft Cob IC=50mA, VCE=10V VCB=10V, IE=0 f=1MHz typ50 <10 >30 typ8.0 MHz pF *hFE CLASSIFICATION CSC1009 R : 40 - 80 CSA709 *Pulse Test: PW=350us, Duty Cycle=2% O : 70 -140 O : 70 -140 Y : 120-240 Y : 120-240 G: 200-400 G: 200-400 Continental ...