Transistors
2SD1330
Silicon NPN epitaxial planar type
For low-voltage output amplification For muting For DC-DC convert...
Transistors
2SD1330
Silicon
NPN epitaxial planar type
For low-voltage output amplification For muting For DC-DC converter
(0.4)
Unit: mm
6.9±0.1 (1.5) (1.5) 2.5±0.1 (1.0)
■ Features
Low collector-emitter saturation voltage VCE(sat) Low ON resistance Ron High forward current transfer ratio hFE M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
3.5±0.1
(1.0) 2.0±0.2 2.4±0.2
0.45±0.05 1
R 0.9 R 0.7
www.DataSheet4U.com
1.0±0.1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Rating 25 20 12 0.5 1 600 150 −55 to +150
Unit V V V A A mW °C °C
3 (2.5) 2 (2.5)
1.25±0.05
■ Absolute Maximum Ratings Ta = 25°C
(0.85) 0.55±0.1
1 : Base 2 : Collector 3 : Emitter M-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Symbol VCBO VCEO VEBO ICBO hFE1 *2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistanse *3 VCE(sat) VBE(sat) fT Cob Ron Conditions IC = 10 µA, ...
