PFF4N60

Pyramis Corporation “The Silicon System Solutions Company” Applications: Adaptor Charger SMPS Standby Power LCD Panel Power Features: Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves PFB4N60/PFF4N60 PRELIMINARY N-Channel MOSFET VDSS 600V RDS(ON) typical 1.8 Ω ID 4.1A www.DataSheet4U.com Ordering Information PART NUMBER PFB4N60 PFF4N60 PACKAGE TO-220 TO-220F BRAND PFB4N60 PFF4N60 G DS TO-220 Not to Scale GDS TO-220F Not to Scale Absolute Maximum Ratings Symbol VDSS ID ID@ 100 C IDM PD VGS EAS IAS dv/dt TL TPKG TJ and TSTG o Tc=25 oC unless otherwise specified Parameter PFB4N60 PFF4N60 (NOTE *1) Units V Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current, VGS@ 10V Power Dissipation Derating Factor above 25 C Gate-to-Source Voltage Single Pulse Avalanche Engergy L=3.0mH, ID=4.1 Amps Pulsed Avalanche Engergy Peak Diode Recovery dv/dt Maximum Soldering Lead Temperature Max Package Body for 10 seconds Operating Junction and Storage Temperature Range o 600 4.1 Fig. 3 4.1* A 33 0.26 W W/ oC V mJ (NOTE *2) Fig. 6 100 0.80 ±30 250 Fig. 8 (NOTE *3) 3.0 300 260 -55 to 150 V/ns o C *Drain current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the semiconductor device. Thermal Resistance Symbol RθJC RθJA Parameter Junction-to-Case. Junction-to-Ambient PFB4N...