PH20100S

PH20100S N-channel TrenchMOS™ standard level FET Rev. 02 — 17 August 2004 Product data sheet 1. Product profile 1.1 General description www.DataSheet4U.com Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Low thermal resistance s Low gate drive current s SO8 equivalent area footprint s Low on-state resistance. 1.3 Applications s DC-to-DC converters s Switched-mode power supplies 1.4 Quick reference data s VDS ≤ 100 V s Ptot ≤ 62.5 W s ID ≤ 34.3 A s RDSon ≤ 23 mΩ 2. Pinning information Table 1: Pin 1,2,3 4 mb Discrete Pinning Description source (s) gate (g) mounting base; connected to drain (d) mb Simplified outline Symbol d g mbb076 s 1 2 3 4 Top view SOT669 (LFPAK) Philips Semiconductors PH20100S N-channel TrenchMOS™ standard level FET 3. Ordering information Table 2: Ordering information Package Name PH20100S LFPAK Description Plastic single-ended surface mounted package (Philips version LFPAK); 4 leads Version SOT669 Type number www.DataSheet4U.com 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs u...